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Bacoside A

$864

Brand : BIOFRON
Catalogue Number : BN-O0017
Specification : 95%(HPLC)
CAS number : 11028-00-5
Formula : C41H68O13
Molecular Weight : 769
PUBCHEM ID : 92043183
Volume : 5mg

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Catalogue Number

BN-O0017

Analysis Method

Specification

95%(HPLC)

Storage

2-8°C

Molecular Weight

769

Appearance

Botanical Source

Structure Type

Category

SMILES

CC(=CCCC(C)(C1C2CCC3C(C2(CC1=O)C)(CCC4C3(CCC(C4(C)C)OC5C(C(C(C(O5)CO)OC6C(C(C(CO6)O)O)O)O)O)CO)C)O)C

Synonyms

(5R,8R,9S,10S,13R,14R,17S)-3-[(2R,3R,4R,5S,6R)-3,4-dihydroxy-6-(hydroxymethyl)-5-[(2S,3R,4S,5S)-3,4,5-trihydroxyoxan-2-yl]oxyoxan-2-yl]oxy-10-(hydroxymethyl)-17-[(2S)-2-hydroxy-6-methylhept-5-en-2-yl]-4,4,8,14-tetramethyl-1,2,3,5,6,7,9,11,12,13,15,17-dodecahydrocyclopenta[a]phenanthren-16-one

IUPAC Name

(5R,8R,9S,10S,13R,14R,17S)-3-[(2R,3R,4R,5S,6R)-3,4-dihydroxy-6-(hydroxymethyl)-5-[(2S,3R,4S,5S)-3,4,5-trihydroxyoxan-2-yl]oxyoxan-2-yl]oxy-10-(hydroxymethyl)-17-[(2S)-2-hydroxy-6-methylhept-5-en-2-yl]-4,4,8,14-tetramethyl-1,2,3,5,6,7,9,11,12,13,15,17-dodecahydrocyclopenta[a]phenanthren-16-one

Density

1.3±0.1 g/cm3

Solubility

Soluble in Chloroform,Dichloromethane,Ethyl Acetate,DMSO,Acetone,etc.

Flash Point

259.5±27.8 °C

Boiling Point

882.3±65.0 °C at 760 mmHg

Melting Point

InChl

InChl Key

LKCTWIIDXXXXAR-CYGHALRTSA-N

WGK Germany

RID/ADR

HS Code Reference

Personal Projective Equipment

Correct Usage

For Reference Standard and R&D, Not for Human Use Directly.

Meta Tag

provides coniferyl ferulate(CAS#:11028-00-5) MSDS, density, melting point, boiling point, structure, formula, molecular weight etc. Articles of coniferyl ferulate are included as well.>> amp version: coniferyl ferulate

No Technical Documents Available For This Product.

PMID

31308483

Abstract

Amorphous chalcogenide thin films are widely studied due to their enhanced properties and extensive applications. Here, we have studied amorphous Ga-Sb-Se chalcogenide thin films prepared by magnetron co-sputtering, via laser ablation quadrupole ion trap time-of-flight mass spectrometry. Furthermore, the stoichiometry of the generated clusters was determined which gives information about individual species present in the plasma plume originating from the interaction of amorphous chalcogenides with high energy laser pulses. Seven different compositions of thin films (Ga content 7.6-31.7 at. %, Sb content 5.2-31.2 at. %, Se content 61.2-63.3 at. %) were studied and in each case about ~50 different clusters were identified in positive and ~20-30 clusters in negative ion mode. Assuming that polymers can influence the laser desorption (laser ablation) process, we have used parafilm as a material to reduce the destruction of the amorphous network structure and/or promote the laser ablation synthesis of heavier species from those of lower mass. In this case, many new and higher mass clusters were identified. The maximum number of (40) new clusters was detected for the Ga-Sb-Se thin film containing the highest amount of antimony (31.2 at. %). This approach opens new possibilities for laser desorption ionization/laser ablation study of other materials. Finally, for selected binary and ternary clusters, their structure was calculated by using density functional theory optimization procedure.

Subject terms: Surfaces, interfaces and thin films; Mass spectrometry

Title

Mass spectrometric investigation of amorphous Ga-Sb-Se thin films

Author

Ravi Mawale,1 Tomaš Halenkovic,1,2 Marek Bouška,1 Jan Gutwirth,1 Virginie Nazabal,1,2 Pankaj Lochan Bora,3,4 Lukaš Pecinka,3 Lubomir Prokeš,3,5,6 Josef Havel,3 and Petr Němeccorresponding author1

Publish date

2019;

PMID

31844112

Abstract

The Ge-Bi-Se thin films of varied compositions (Ge content 0-32.1 at. %, Bi content 0-45.7 at. %, Se content 54.3-67.9 at. %) have been prepared by rf magnetron (co)-sputtering technique. The present study was undertaken in order to investigate the clusters generated during the interaction of laser pulses with Ge-Bi-Se thin films using laser ablation time-of-flight mass spectrometry. The stoichiometry of the clusters was determined in order to understand the individual species present in the plasma plume. Laser ablation of Ge-Bi-Se thin films accompanied by ionization produces about 20 positively and/or negatively charged unary, binary and ternary (Gex+, Biy+, Sez+/−, GexSez+/−, BiySez+/− and GexBiySez−) clusters. Furthermore, we performed the laser ablation experiments of Ge:Bi:Se elemental mixtures and the results were compared with laser ablation time-of-flight mass spectrometry analysis of thin films. Moreover, to understand the geometry of the generated clusters, we calculated structures of some selected binary and ternary clusters using density functional theory. The generated clusters and their calculated possible geometries can give important structural information, as well as help to understand the processes present in the plasma processes exploited for thin films deposition.

Subject terms: Mass spectrometry, Surfaces, interfaces and thin films

Title

Amorphous Ge-Bi-Se Thin Films: A Mass Spectrometric Study

Author

Ravi Mawale,corresponding author1 Govinda Mandal,2 Marek Bouška,1 Jan Gutwirth,1 Pankaj Lochan Bora,2 Virginie Nazabal,1,3 Josef Havel,2 and Petr Němeccorresponding author1

Publish date

2019

PMID

28615650

Abstract

The development of the optical bio-chemical sensing technology is an extremely important scientific and technological issue for diagnosis and monitoring of diseases, control of industrial processes, environmental detection of air and water pollutants. Owing to their distinctive features, chalcogenide amorphous thin films represent a keystone in the manufacture of middle infrared integrated optical devices for a sensitive detection of biological or environmental variations. Since the chalcogenide thin films characteristics, i.e. stoichiometric conformity, structure, roughness or optical properties can be affected by the growth process, the choice and control of the deposition method is crucial. An approach based on the experimental design is undoubtedly a way to be explored allowing fast optimization of chalcogenide film deposition by means of radio frequency sputtering process. Argon (Ar) pressure, working power and deposition time were selected as potentially the most influential factors among all possible. The experimental design analysis confirms the great influence of the Ar pressure on studied responses: chemical composition, refractive index in near-IR (1.55 µm) and middle infrared (6.3 and 7.7 µm), band-gap energy, deposition rate and surface roughness. Depending on the intended application and therefore desired thin film characteristics, mappings of the experimental design meaningfully help to select suitable deposition parameters.

Title

Experimental design approach for deposition optimization of RF sputtered chalcogenide thin films devoted to environmental optical sensors

Author

E. Baudet,1 M. Sergent,2 P. Němec,3 C. Cardinaud,4 E. Rinnert,5 K. Michel,6 L. Jouany,1 B. Bureau,1 and V. Nazabalcorresponding author1,3

Publish date

2017